irgc5b120kb pd - 94314 irgc5b120kb igbt die in wafer form 1200 v i c(nom) = 5a vce(on) typ. = 2.55v @ i c(nom) @ 25 c motor control igbt short circuit rated 150mm wafer 10/02/01 norminal backmetal composition, thickness: al-ti-niv-ag ( 1ka-1ka-4ka-6ka ) norminal front metal composition, thickness: 99% al, 1% si (4 microns) dimensions: 0.112" x 0.150" wafer diameter: 150mm, with std. < 100 > flat wafer thickness: 185 +/- 15 microns relevant die mechanical dwg. number 01-5430 minimum street width 100 microns reject ink dot size 0.25mm diameter minimum ink dot location consistent throughout same wafer lot recommended storage environment: store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300c mechanical data die outline parameter description guaranteed (min/max) test conditions v ce (on) collector-to-emitter saturation voltage 1.79v min., 2.22v max. i c = 2.5a, t j = 25c, v ge = 15v v (br)ces collector-to-emitter breakdown voltage 1200v min. t j = 25c, i ces = 100a, v ge = 0v v ge(th) gate threshold voltage 4.4v min., 6.0v max. v ge = v ce , t j =25c, i c =125a i ces zero gate voltage collector current 5.0 a max. t j = 25c, v ce = 1200v i ges gate-to-emitter leakage current 1.1 a max. t j = 25c, v ge = +/- 20v electrical characteristics ( wafer form ) e c g emitter g 3.810 [.150] 1.454 [.057] 0.617 [.024] 2.845 [.112] 2.325 [.091] 0.646 [.025] 1. all di me ns ions are s h own in mi lli me t e rs [inche s ]. 4. di me ns ional t ol e rance s : 3. le tt er de signat ion: 2. cont rolli ng di me ns ion: [inch]. not e s : widt h < [.050] t olerance = + /- [.004] > [.050] tolerance = +/- [.008] > 1.270 t olerance = + /- 0.203 & length > [.0250] tolerance = + /- [.0010] > 0.635 t olerance = + /- 0.025 < [.0250] tolerance = + /- [.0005] < 0.635 t olerance = + /- 0.013 < 1.270 t olerance = + /- 0.102 & length overall die: widt h bonding pads: sk = source kelvin is = currents ense g = gat e s = source e = emitter features gen5 non punch through (npt) technology low v ce(on) 10s short circuit capability square rbsoa positive v ce(on) temperature coefficient benefits benchmark efficiency for motor control rugged transient performance excellent current sharing in parallel operation qualified for industrial market
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